hall mobility meaning in Chinese
堆尔迁移率
霍耳迁移率
Examples
- Extrinsic semiconductor single crystals - measurement of hall mobility and hall coefficient
非本征半导体单晶霍尔迁移率和霍尔系数测量方法 - Test methods for measuring resistivity and hall coefficient and determining hall mobility in single - crystal semiconductors
测量单晶半导体的电阻率霍尔系数及霍尔迁移率的试验方法 - Here the conductance , carrier concentration and hall mobility ect parameters of er doped cdte films have been given . using seto model , we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
讨论了不同er离子注入量对硅基底上沉积的cdte薄膜结构和光电性能的影响,并具体给出了掺杂cdte多晶薄膜的电导、载流子浓度及迁移率等参数值。 - The sheet resistivity dramatically decreases to 106 ? / ? . the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too . te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面载流子浓度增大到109 / cm2的数量级，迁移率亦增大到104cm2 / v . s ，掺杂te元素改善了cdte薄膜的电学性质，使其变为良好的p型半导体。 - The n type carrier was provided by interstitial zn atom , and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility . when zno thin film was annealed in the ar ambience , p conduction type was founded in the zno thin film which grew in oxygen enrichment condition . this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ) , and p type carrier was from oi
在ar气保护下,对富氧条件下生长的zno薄膜的退火后的霍尔测量中发现, zno薄膜呈现p型导电状态,分析认为,这可能是由于富氧状态下生长的zno薄膜中过量的o在ar气保护下退火没有逸出薄膜,反而进入了zno薄膜的间隙位置,成为正电中心,使zno薄膜呈现p型导电。